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PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 -- 22 November 2009 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110D.
1.2 Features
Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications
1.4 Quick reference data
Table 1. VCEO IC ICM RCEsat
[1]
Quick reference data Conditions open base single pulse; tp 1 ms IC = -1 A; IB = -100 mA
[1]
Symbol Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance
Min -
Typ 170
Max -100 -1 -3 320
Unit V A A m
Pulse test: tp 300 s; 0.02.
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1, 2, 5, 6 3 4 Pinning Description collector base emitter
1 2 3 6 5 4 3 4
sym030
Simplified outline
Symbol
1, 2, 5, 6
3. Ordering information
Table 3. Ordering information Package Name PBSS9110D SC-74 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number
4. Marking
Table 4. Marking codes Marking code A7 Type number PBSS9110D
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current total power dissipation Tamb 25 C
[1] [2] [3]
Conditions open emitter open base open collector single pulse; tp 1 ms
Min -
Max -120 -100 -5 -1 -3 -0.3 300 550 700
Unit V V V A A A mW mW mW
PBSS9110D_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 22 November 2009
2 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
Table 5. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Tj Tamb Tstg
[1] [2] [3]
Parameter junction temperature ambient temperature storage temperature
Conditions
Min -65 -65
Max 150 +150 +150
Unit C C C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.
800 Ptot (mW) 600
(1)
001aaa493
400
(2)
200
(3)
0 0 40 80 120 160 Tamb (C)
(1) FR4 PCB, mounting pad for collector 6cm2 (2) FR4 PCB, mounting pad for collector 1cm2 (3) FR4 PCB, standard footprint
Fig 1.
Power derating curves
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1] [2] [3]
Min -
Typ -
Max 416 227 178 83
Unit K/W K/W K/W K/W
Rth(j-sp)
[1] [2] [3]
thermal resistance from junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.
PBSS9110D_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 22 November 2009
3 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
103 Zth(j-a) (K/W) 102
001aaa818
duty cycle = 1 0.5 0.33 0.2 0.1 0.05 0.75
10
0.02 0.01
1
0
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, standard footprint
Fig 2.
103 Zth(j-a) (K/W) 102
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
001aaa819
duty cycle = 1 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0.75
10
1
0
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, mounting pad for collector 1cm2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS9110D_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 22 November 2009
4 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter ICBO collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain Conditions VCB = -80 V; IE = 0 A VCB = -80 V; IE = 0 A; Tj = 150 C VCE = -80 V; VBE = 0 V VEB = -4 V; IC = 0 A VCE = -5 V; IC = -1 mA VCE = -5 V; IC = -250 mA VCE = -5 V; IC = -0.5 A VCE = -5 V; IC = -1 A VCEsat collector-emitter saturation voltage IC = -250 mA; IB = -25 mA IC = -0.5 A; IB = -50 mA IC = -1 A; IB = -100 mA RCEsat VBEsat VBEon td tr ton ts tf toff fT collector-emitter saturation resistance base-emitter saturation voltage base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency VCE = -10 V; IC = -50 mA; f = 100 MHz VCB = -10 V; IE = ie = 0 A; f = 1 MHz IC = -1 A; IB = -100 mA IC = -1 A; IB = -100 mA VCE = -5 V; IC = -1 A VCC = -10 V; IC = -0.5 A; IBon = -0.025 A; IBoff = 0.025 A
[1] [1]
Min 150 150 150 125 100
Typ 170 20 60 80 290 120 410 -
Max -100 -50 -100 -100 450 -120 -180 -320 320 -1.1 -1.0 -
Unit nA A nA nA
ICES IEBO hFE
[1]
mV mV mV m V V ns ns ns ns ns ns MHz
[1]
[1]
[1]
Cc
collector capacitance
-
-
17
pF
[1]
Pulse test: tp 300 s; 0.02.
PBSS9110D_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 22 November 2009
5 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
600 hFE
(1)
001aaa376
IB (mA) = -45 IC -40.5 (A) -36 -1.6 -31.5 -27 -1.2
-2
001aaa384
400
(2)
-0.8 200
(3)
-0.4
-22.5 -18 -13.5 -9 -4.5
0 -10-1
-1
-10
-102
-103 -104 IC (mA)
0 0
-1
-2
-3
-4
VCE (V)
-5
VCE = -10 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C
Fig 4.
DC current gain as a function of collector current; typical values
001aaa377
Fig 5.
Collector current as a function of collector-emitter voltage; typical values
001aaa381
-1.2 VBE (V) -0.8
(1)
-10
VBEsat (V)
(2)
-1
(3)
(1) (2) (3)
-0.4
0 -10-1
-1
-10
-102
-103 -104 IC (mA)
-10-1 -10-1
-1
-10
-102
-103 -104 IC (mA)
VCE = -10 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
IC/IB = 10 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 6.
Base-emitter voltage as a function of collector current; typical values
Fig 7.
Base-emitter saturation voltage as a function of collector current; typical values
PBSS9110D_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 22 November 2009
6 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
-1
001aaa378
-1
001aaa380
VCEsat (V)
VCEsat (V)
-10-1
-10-1
(1) (2) (1) (2) (3)
-10-2 -10-1
-1
-10
-102
-103 -104 IC (mA)
-10-2 -10-1
-1
-10
-102
-103 -104 IC (mA)
IC/IB = 10 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 50 (2) IC/IB = 20
Fig 8.
Collector-emitter saturation voltage as a function of collector current; typical values
001aaa382
Fig 9.
Collector-emitter saturation voltage as a function of collector current; typical values
001aaa383
103 RCEsat () 102
103 RCEsat () 102
10
(1) (2)
10
(1)
1
(3)
1
(2)
10-1 -10-1
-1
-10
-102
-103 -104 IC (mA)
10-1 -10-1
-1
-10
-102
-103 -104 IC (mA)
IC/IB = 10 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
Tamb = 25 C (1) IC/IB = 50 (2) IC/IB = 20
Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values
Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values
PBSS9110D_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 22 November 2009
7 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
8. Test information
-I B
90 % input pulse (idealized waveform)
-I Bon (100 %)
10 %
-I Boff
-I C
90 %
output pulse (idealized waveform)
-I C (100 %)
10 % t td t on tr ts t off tf
006aaa266
Fig 12. BISS transistor switching time definition
VBB VCC
RB (probe) oscilloscope 450 VI R1 R2
RC Vo (probe) 450 DUT oscilloscope
mgd624
VCC = -10 V; IC = -0.5 A; IBon = -0.025 A; IBoff = 0.025 A
Fig 13. Test circuit for switching times
PBSS9110D_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 22 November 2009
8 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
9. Package outline
3.1 2.7 6 5 4 0.6 0.2 1.1 0.9
3.0 2.5
1.7 1.3
pin 1 index
1 0.95 1.9 Dimensions in mm
2
3 0.40 0.25 0.26 0.10 04-11-08
Fig 14. Package outline SOT457 (SC-74)
10. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS9110D Package SOT457 Description 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2
[1] [2] [3]
[2] [3]
Packing quantity 3000 -115 -125 10000 -135 -165
For further information and the availability of packing methods, see Section 14. T1: normal taping T2: reverse taping
PBSS9110D_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 22 November 2009
9 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
11. Soldering
3.45 1.95
solder lands 0.95 3.30 2.825 0.45 0.55 occupied area solder paste solder resist
1.60 1.70 3.10 3.20
msc422
Dimensions in mm
Fig 15. Reflow soldering footprint SOT457 (SC-74)
5.30
solder lands 5.05 0.45 1.45 4.45 solder resist occupied area
1.40 4.30
msc423
Dimensions in mm
Fig 16. Wave soldering footprint SOT457 (SC-74)
PBSS9110D_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 22 November 2009
10 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history Release date 20091122 Data sheet status Product data sheet Change notice Supersedes PBSS9110D_2 Document ID PBSS9110D_3 Modifications:
* *
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Figure 16 "Wave soldering footprint SOT457 (SC-74)": updated Product data sheet Objective data sheet PBSS9110D_1 -
PBSS9110D_2 PBSS9110D_1
20060713 20040611
PBSS9110D_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 22 November 2009
11 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PBSS9110D_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 22 November 2009
12 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 November 2009 Document identifier: PBSS9110D_3

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